Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
نویسندگان
چکیده
منابع مشابه
Impact-Ionization and Noise Characteristics of Thin III–V Avalanche Photodiodes
It is, by now, well known that McIntyre’s localized carrier-multiplication theory cannot explain the suppression of excess noise factor observed in avalanche photodiodes (APDs) that make use of thin multiplication regions. We demonstrate that a carrier multiplication model that incorporates the effects of dead space, as developed earlier by Hayat et al. provides excellent agreement with the imp...
متن کاملBreakdown voltage in thin III–V avalanche photodiodes
The dead-space multiplication theory of Hayat and Saleh @J. Lightwave Technol. 10, 1415 ~1992!#, in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. @IEEE Trans. Electron Devices 47, 625 ~2000!#, are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0.52Al0.48As, and Al0.2Ga0.8As, over a broa...
متن کاملGain-Bandwidth Characteristics of Thin Avalanche Photodiodes
The frequency-response characteristics of avalanche photodiodes (APDs) with thin multiplication layers are investigated by means of a recurrence technique that incorporates the history dependence of ionization coefficients. In addition, to characterize the autocorrelation function of the impulse response, new recurrence equations are derived and solved using a parallel computer. The mean freque...
متن کاملExcess Noise in GaAs Avalanche Photodiodes with Thin Multiplication Regions
It is well known that the gain–bandwidth product of an avalanche photodiode can be increased by utilizing a thin multiplication region. Previously, measurements of the excess noise factor of InP–InGaAsP–InGaAs avalanche photodiodes with separate absorption and multiplication regions indicated that this approach could also be employed to reduce the multiplication noise. This paper presents a sys...
متن کاملA New Look at Impact Ionization—Part II: Gain and Noise in Short Avalanche Photodiodes
In Part I, a new theory for impact ionization that utilizes history-dependent ionization coefficients to account for the nonlocal nature of the ionization process has been described. In this paper, we will review this theory and extend it with the assumptions that are implicitly used in both the local-field theory in which the ionization coefficients are functions only of the local electric fie...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2001
ISSN: 0018-9383
DOI: 10.1109/16.974696